Photodiode array with amplifier S11865-256G

S11865-256G,S8865-256G
Datasheet [1 MB/PDF]

This is a photodiode array with an amplifier and a phosphor sheet attached to the photosensitive area for X-ray detection. X-ray tolerance has been improved compared to the previous products (S8865/S8866 series). The signal processing circuit chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configured by arranging multiple arrays in a row.


Features
-Data rate: 1 MHz max.
-Large element pitch: 0.2 mm pitch × 256 ch
-5 V power supply operation
-Simultaneous integration by using a charge amplifier array
-Low dark current due to zero-bias photodiode operation
-Integrated clamp circuit allows low noise and wide dynamic range
-Integrated timing generator allows operation at two different pulse timings
-Detectable energy range: 30 k to 100 keV

Specifications

Image size 51.2 x 0.3 mm
Number of effective pixels 256 pixels
Pixel size 0.1 x 0.3 mm
Pixel pitch 0.2 mm
Supply voltage 5 V
Scintillator Phosphor sheet
Peak sensitivity wavelength 720 nm
Line rate max. 3844 lines/s
Charge amp feedback capacitance 0.5 pF
Note for X-ray
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, peak sensitivity wavelength: without phosphor sheet

Dimensional outline (unit: mm)

KMPDA0234

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